Fairchild Semiconductor N/A KSH50TF Datenbogen
Produktcode
KSH50TF
KSH47 /
KSH50
— NPN Epit
axial Silicon T
ransistor
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSH47 / KSH50 Rev. 1.1.0
1
March 2014
KSH47 / KSH50
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Features
• High-Voltage and High-Reliability
• D-PAK for Surface-Mount Applications
• Lead-Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “ - I ” Suffix)
• Electrically Similar to Popular TIP47 and TIP50
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Part Number
Top Mark
Package
Packing Method
KSH47TF
KSH47
TO-252 3L (DPAK)
Tape and Reel
KSH50TF
KSH50
TO-252 3L (DPAK)
Tape and Reel
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
KSH47
350
V
KSH50
500
V
CEO
Collector-Emitter Voltage
KSH47
250
V
KSH50
400
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
1
A
I
CP
Collector Current (Pulse)
2
A
I
B
Base Current
0.6
A
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature Range
- 65 to 150
°C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1