Fairchild Semiconductor N/A KSH45H11ITU Datenbogen

Produktcode
KSH45H11ITU
Seite von 6
KSH45H1
1
 — 
PNP Epit
ax
ial Silicon T
ransistor
© 2002 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
KSH45H11 Rev. 1.2.0
November 2013
 KSH45H11
PNP Epitaxial Silicon Transistor
Features
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular KSE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
Applications
• Switching Regulators
• Converters
• Power Amplifiers
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
 = 25°C unless otherwise noted.
Part Number
Top Mark
Package
Packing Method
KSH45H11TF
KSH45H11
TO-252 3L (DPAK)
Tape and Reel
KSH45H11TM
KSH45H11
TO-252 3L (DPAK)
Tape and Reel
KSH45H11ITU
KSH45H11-I
TO-251 3L (IPAK)
Rail
Symbol
Parameter
Value
Unit
 V
CEO
 Collector-Emitter Voltage
-80
V
 V
EBO
 Emitter-Base Voltage
-5
V
 I
C
 Collector Current (DC)
-8
A
 I
CP
 Collector Current (Pulse)
-16
A
 
P
C
 Collector Dissipation (T
C
 = 25
°C)
20
W
 Collector Dissipation (T
A
 = 25
°C)
1.75
W
 T
J
 Junction Temperature
150
°C
 T
STG
 Storage Temperature
-55 to 150
°C
Description
General-purpose power and switching such as output or
driver stages in applications D-PAK for surface mount
applications.
1.Base    2.Collector    3.Emitter
D-PAK
I-PAK
1
1