Fairchild Semiconductor N/A KSH42CTF Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW

≤

300

µ

s, Duty Cycle

≤

2%

 V

CBO

 Collector-Base Voltage

-100

V

 V

CEO

 Collector-Emitter Voltage

-100

V

 V

EBO

 Emitter-Base Voltage

  -5

V

 I

C

 Collector Current (DC)

  -6

A

 I

CP

 Collector Current (Pulse)

 -10

A

 I

B

 Base Current

  -2

A

 

P

C

 Collector Dissipation (T

C

=25

°

C)

  20

W

 Collector Dissipation (T

a

=25

°

C)

1.75

W

 T

J

 Junction Temperature

 150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 V

CEO

(sus)

* Collector-Emitter Sustaining Voltage

 I

C 

= - 30mA, I

B 

= 0

-100

V

 I

CEO

 Collector Cut-off Current

 V

CE 

= -60V, I

B 

= 0

 -50

µ

A

 I

CES

 Collector Cut-off Current

 V

CE

 = -100V, V

BE 

= 0 

 -10

µ

A

 I

EBO

 Emitter Cut-off Current

 V

BE 

= -5V, I

C 

= 0

-0.5

mA

 

h

FE

* DC Current Gain

 V

CE 

= -4V, I

C 

= -0.3A

 V

CE 

= -4V, I

C 

= -3A

  30
  15

  75

 V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

C 

= -6A, I

B 

= -600mA

-1.5

V

 V

BE

(on)

* Base-Emitter On Voltage

 V

CE 

= -6A, I

C 

= -4A

  -2

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= -10V, I

C 

= -500mA

   3

MHz

• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP42C

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

1