Fairchild Semiconductor N/A BCW89 Datenbogen

©2003 Fairchild Semiconductor Corporation

Rev. A, May 2003

T

C

=25

°

C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

C

=25

°

C unless otherwise noted

T

A

=25

°

C unless otherwise noted

V

CEO

Collector-Emitter Voltage

-60

V

V

CES

Collector-Emitter Voltage

-60

V

V

EBO

Emitter-Base Voltage

-5.0

V

I

C

Collector current

- Continuous

-500

mA

T

J

, T

stg

Junction and Storage Temperature

-55 ~ +150

°

C

V

(BR)CBO

Collector-Base Breakdown Voltage

I

C

 = -10

µ

A, I

E

 = 0

-80

V

V

(BR)CEO

Collector-Emitter Breakdown Voltage

I

C

 = -2.0mA, I

B

 = 0

-60

V

V

(BR)CES

Collector-Emitter Breakdown Voltage

I

C

 = -10

µ

A, I

E

 = 0

-60

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

C

 = -10

µ

A, I

C

 = 0

-5.0

V

I

CBO

Collector Cutoff Current

V

CB

 = -20V, I

E

 = 0

V

CB

 = -20V, I

E

 = 0, T

A

 = +100

°

C

-100

-10

nA

µ

A

h

FE

DC Current Gain

V

CE

 = -5.0V, I

C

 = -2.0mA

120

260

V

CE(sat)

Collector-Emitter Saturation Voltage

I

C

 = -10mA, I

B

 = -0.5mA

-0.3

V

V

BE(on)

Base-Emitter On Voltage

V

CE

 = -5.0V, I

C

 = -2.0mA

-0.6

-0.75

V

NF

Noise Figure

V

CE

 = -5.0V, I

C

 = -200

µ

A

R

S

 = 2.0k

Ω

, f = 1.0kHz

B

W

 = 200Hz

10

dB

P

D

Total Device Dissipation
Derate above 25

°

C

350

2.8

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

357

°

C/W

• This device is designed for general purpose medium power amplifiers 

and switches requiring collector currents to 300mA.

• Sourced from process 68.

1. Base  2. Emitter  3. Collector 

1

2

3

SOT-23