Fairchild Semiconductor N/A 2N3904TFR Datenbogen

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

2N3904 / MMBT3904 / PZT3904 Rev. B0

1 

October 2011

• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

T

a

 = 25

°C unless otherwise noted 

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
    operations.

T

a

 = 25

°C unless otherwise noted 

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

2

.

V

CEO

Collector-Emitter Voltage

40

V

V

CBO

Collector-Base Voltage

60

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C

Collector Current - Continuous

200

mA

T

J, 

T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

P

D

Total Device Dissipation
          Derate above 25

°C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°C

R

θJC

Thermal Resistance, Junction to Case

83.3

°C/W

R

θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W