Fairchild Semiconductor N/A KSH127TF Datenbogen
Produktcode
KSH127TF
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH127
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 100
V
V
CEO
Collector-Emitter Voltage
- 100
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 8
A
I
CP
Collector Current (Pulse)
- 16
A
I
B
Base Current
- 120
mA
P
C
Collector Dissipation (T
C
=25
°
C)
20
W
Collector Dissipation (T
a
=25
°
C)
1.75
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
I
C
= - 30mA, I
B
= 0
- 100
V
I
CEO
Collector Cut-off Current
V
CE
= - 50V, I
B
= 0
- 10
µ
A
I
CBO
Collector Cut-off Current
V
CB
= - 100V, I
E
= 0
- 10
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 2
mA
h
FE
*DC Current Gain
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, V
EB
= -8A
1000
100
12K
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= - 4A, I
B
= - 16mA
I
C
= - 8A, I
B
= - 80mA
- 2
- 4
- 4
V
V
V
V
BE
(sat)
*Base-Emitter Saturation Voltage
I
C
= - 8A, I
B
= - 80mA
- 4.5
V
V
BE
(on)
*Base-Emitter On Voltage
V
CE
= -4V, I
C
= - 4A
- 2.8
V
C
ob
Output Capacitance
V
CB
= - 10V, I
E
= 0
f= 0.1MHz
300
pF
KSH127
D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP127
• Complement to KSH122
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP127
• Complement to KSH122
Equivalent Circuit
B
E
C
R1
R2
R1 8k
Ω
≅
R2 0.12k
Ω
≅
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1