Rohm Semiconductor EMH3T2R Bipolar Transistor Emitter reverse voltage U(CEO) 50 V EMH3T2R Datenbogen
Produktcode
EMH3T2R
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
EMH3 / UMH3N / IMH3A
NPN 100mA 50V Complex Digital Transistors
(Bias Resistor Built-in Transistors)
lOutline
lFeatures
1) Built-In Biasing Resistors.
2) Two DTC143T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
lInner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
3,000
H3
UMH3N
UMT6
2021
TR
180
8
SMT6
2928
T108
180
8
8,000
H3
8
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMH3
EMT6
1616
T2R
180
3,000
H3
IMH3A
Part No.
Package
Package
size
(mm)
Taping
code
R
1
4.7k
W
Parameter
Tr1 and Tr2
V
CEO
50V
I
C(MAX.)
100mA
EMT6
UMT6
SMT6
EMH3
(SC-107C)
IMH3A
SOT-457 (SC-74)
UMH3N
SOT-353 (SC-88)
EMH3 / UMH3N
IMH3A
Collector
(6)
(2)
Base
(1)
Emitter
(3)
Collector
Base
(5)
Emitter
(4)
Collector
(4)
(2)
Base
(3)
Emitter
(1)
Collector
Base
(5)
Emitter
(6)
(6)
(5)
(4)
(5)
(4)
(1)
(2)
(3)
(2)
(3)
(4)
(5)
(6)
(5)
(6)
(3)
(2)
(1)
(2)
(1)
(6)
(5)
(4)
(5)
(4)
(1)
(2)
(3)
(2)
(3)
1/6
2012.06 - Rev.B