Fairchild Semiconductor N/A KSD1691YSTU Datenbogen

©2000 Fairchild Semiconductor International

Rev. A, February 2000

T

C

=25

°

C unless otherwise noted

* PW

≤

10ms, duty Cycle

≤

50%

T

C

=25

°

C unless otherwise noted

* Pulse test: PW

≤

50

µ

s, duty Cycle

≤

2% Pulsed

 V

CBO

 Collector-Base Voltage

 60

V

 V

CEO

 Collector-Emitter Voltage

 60

V

 

V

EBO

 Emitter-Base Voltage

  7

V

 

I

C

 Collector Current (DC)

  5

A

 

I

CP

 *Collector Current (Pulse)

  8

A

 

I

B

 Base Current (DC)

  1

A

 

P

C

 Collector Dissipation (T

a

=25

°

C)

1.3

W

 

P

C

 Collector Dissipation (T

C

=25

°

C)

 20

W

 

T

J

 Junction Temperature

150

°

C

 

T

STG

 Storage Temperature

- 55 ~ 150

°

C

 I

CBO

 Collector Cut-off Current

 V

CB 

= 50V, I

E 

= 0

 10

µ

A

 

I

EBO

 Emitter Cut-off Current

 V

EB 

= 7V, I

C 

= 0

 10

µ

A

 

h

FE1

 h

FE2

 

h

FE3

*DC Current Gain

 V

CE 

= 1V, I

C 

= 0.1A

 V

CE 

= 1V, I

C 

= 2A

 V

CE 

= 1V, I

C 

= 5A

60

100

50

400

 V

CE

(sat)

*Collector-Emitter Saturation Voltage

 I

C 

= 2A, I

B 

= 0.2A

 0.1

 0.3

V

 V

BE

(sat)

*Base-Emitter Saturation Voltage

 I

C 

= 2A, I

B 

= 0.2A

 0.9

 1.2

V

 t

ON

 Turn ON Time

 V

CC 

= 10V, I

C 

= 2A

 I

B1

 = - I

B2

 = 0.2A 

 R

L

 = 5

Ω

 0.2

  1

µ

s

 t

STG

 Storage Time

 1.1

2.5

µ

s

 t

F

 Fall Time

 0.2

  1

µ

s

Classification

O

Y

G

h

FE 2

100 ~ 200

160 ~ 320

200 ~ 400

• Low Collector-Emtter Saturation Voltage & Large Collector Current
• High Power Dissipation: P

C

 = 1.3W (T

a

=25

°

C)

• Complementary to KSB1151

1

TO-126

1. Emitter    2.Collector    3.Base