Fairchild Semiconductor N/A KSC2316YTA Datenbogen
Produktcode
KSC2316YTA
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC231
6
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
800
mA
P
C
Collector Power Dissipation
900
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ +150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=1mA, I
E
=0
120
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=10mA, I
B
=0
120
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=1mA, I
C
=0 5
V
I
CBO
Collector Cut-off Current
V
CB
=120V, I
E
=0 0.1
µ
A
h
FE1
h
FE2
DC Current Gain
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
60
80
80
240
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=500mA, I
B
=50mA
1
V
f
T
Current Gain Bandwidth Product
V
CE
=5V, I
C
=100mA
120
MHz
C
ob
Collector Output Capacitance
V
CB
=10V,I
E
=0, f=1MHz
30
pF
Classification O
Y
h
FE2
80-160
120-240
KSC2316
Audio Power Amplifier Applications
• Driver Stage Amplifier
• Complement to KSA916
• Complement to KSA916
TO-92L
1
1. Emitter 2. Collector 3. Base