Fairchild Semiconductor N/A KSC3503DSTU Datenbogen
Produktcode
KSC3503DSTU
2SC3503/KSC3503 — NPN Ep
it
axi
al Silico
n T
ransistor
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2SC3503/KSC3503 Rev. A1
1
March 2008
2SC3503/KSC3503
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
• CRT Display, Video Output
• General Purpose Amplifier
Features
• High Voltage : V
CEO
= 300V
• Low Reverse Transfer Capacitance : C
re
= 1.8pF at V
CB
= 30V
• Excellent Gain Linearity for low THD
• High Frequency: 150MHz
• Full thermal and electrical Spice models are available
• Complement to 2SA1381/KSA1381.
• High Frequency: 150MHz
• Full thermal and electrical Spice models are available
• Complement to 2SA1381/KSA1381.
Absolute Maximum Ratings*
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
T
a
=25
°C unless otherwise noted
* Device mounted on minimum pad size
h
FE
Classification
Symbol
Parameter
Ratings
Units
BV
CBO
Collector-Base Voltage
300
V
BV
CEO
Collector-Emitter Voltage
300
V
BV
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current(DC)
100
mA
I
CP
Collector Current(Pulse)
200
mA
P
C
Total Device Dissipation, T
C
=25
°C
T
C
=125
°C
7
1.2
W
W
W
T
J
, T
STG
Junction and Storage Temperature
- 55 ~ +150
°C
Symbol
Parameter
Max.
Units
R
θJC
Thermal Resistance, Junction to Case
17.8
°C/W
Classification
C
D
E
F
h
FE
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 320
1
TO-126
1. Emitter 2.Collector 3.Base