Fairchild Semiconductor N/A KSC2334YTU Datenbogen

Fairchild Semiconductor

Produktcode

KSC2334YTU

©2001 Fairchild Semiconductor Corporation

Rev. A1, August 2001

KSC233

4

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25

°

C unless otherwise noted

* PW

≤

300

µ

s, Duty Cycle

≤

10%

Electrical Characteristics

TC=25

°

C unless otherwise noted

* Pulse Test: PW

≤

350

µ

s, Duty Cycle

≤

2%Pulsed

h

FE

Classification

Symbol

Parameter

Value

Units

V

CBO

Collector-Base Voltage

150

V

V

CEO

Collector-Emitter Voltage

100

V

V

EBO

Emitter-Base Voltage

7

V

I

C

Collector Current (DC)

7

A

I

CP

*Collector Current (Pulse)

15

A

I

B

Base Current (DC)

3.5

A

P

C

Collector Dissipation (T

C

=25

°

C)

40

W

Collector Dissipation (T

A

=25

°

C)

1.5

W

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

- 55 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Max.

Units

V

CEO

(sus)

Collector-Emitter Sustaining Voltage

I

C

= 5A, I

B1

= 0.5A, L = 1mH

100

V

V

CEX

(sus)1

Collector-Emitter Sustaining Voltage

I

C

= 5A, I

B1

= -I

B2

= 0.5A

V

BE

(off) = -5V, L = 180

µ

H, Clamped

100

V

V

CEX

(sus)2

Collector-Emitter Sustaining Voltage

I

C

= 10A, I

B1

=1A, I

B2

= -0.5A,

V

BE

(off) = -5V, L = 180

µ

H, Clamped

100

V

I

CBO

Collector Cut-off Current

V

CB

= 100, I

E

= 0

10

µ

A

I

CER

Collector Cut-off Current

V

CE

= 100V, R

BE

= 51

Ω

@T

C

=125

°

C

1

mA

I

CEX1

I

CEX2

Collector Cut-off Current

V

CE

= 100V, V

BE

(off) = -1.5V

V

CE

= 100V, V

BE

(off) = -1.5V

@ T

C

= 125

°

C

10

1

µ

A

mA

I

EBO

Emitter Cut-off Current

V

EB

= 5V, I

C

= 0

10

µ

A

h

FE1

h

FE2

h

FE3

* DC Current Gain

V

CE

= 5V, I

C

= 0.5A

V

CE

= 5V, I

C

= 3A

V

CE

= 5V, I

C

= 5A

40
40
20

240

V

CE

(sat)

* Collector-Emitter Saturation Voltage

I

C

= 5A, I

B

= 0.5A

0.6

V

V

BE

(sat)

* Base-Emitter Saturation Voltage

I

C

= 5A, I

B

= 0.5A

1.5

V

t

ON

Turn On Time

V

CC

= 50V, I

C

= 5A

I

B1

= -I

B2

= 0.5A

R

L

= 10

Ω

0.5

µ

s

t

STG

Storage Time

0.5

µ

s

t

F

Fall Time

1.5

µ

s

Classification

R

O

Y

h

FE2

40 ~ 80

70 ~ 140

120 ~ 240

KSC2334

High Speed Switching Industrial Use

• Complement to KSA1010

1.Base 2.Collector 3.Emitter

1

TO-220