Fairchild Semiconductor N/A KSC5502DTM Datenbogen

© 2000 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

KSC5502D / KSC5502DT Rev. 1.1.0

July 2014

• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D-PAK or TO-220

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

C

 = 25°C unless otherwise noted.

1. Pulse test: Pulse width = 5 ms, duty cycle 

≤ 10%.

KSC5502DTM

C5502D

TO-252 3L (DPAK)

Tape and Reel

KSC5502DTTU

C5502D

TO-220 3L

Rail

V

CBO

Collector-Base Voltage

1200

V

V

CEO

Collector-Emitter Voltage

600

V

V

EBO

Emitter-Base Voltage

12

V

I

C

Collector Current (DC)

2

A

I

CP

Collector Current (Pulse)

(1)

4

A

I

B

Base Current (DC)

1

A

I

BP

Base Current (Pulse)

(1)

2

A

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature Range

-65 to 150

°C

EAS

Avalanche Energy (T

J

 = 25°C)

2.5

mJ

1

1.Base    2,4.Collector    3.Emitter

1

D-PAK

TO-220

C

B

E

Equivalent Circuit

4

4