Infineon Technologies N/A BCX 70 H NPN Case type SOT 23 I(C) BCX70H Datenbogen
Produktcode
BCX70H
2007-04-20
3
BCW60, BCX70
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BCW60, ...60FF
I
C
= 10 mA, I
B
= 0 , BCX70
V
(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA, I
E
= 0 , BCW60, ...60FF
I
C
= 10 µA, I
E
= 0 , BCX70
V
(BR)CBO
32
45
-
-
-
-
Emitter-base breakdown voltage
I
E
= 1 µA, I
C
= 0
V
(BR)EBO
6
-
-
Collector-base cutoff current
V
CB
= 32 V, I
E
= 0 , BCW60, ...60FF
V
CB
= 45 V, I
E
= 0 , BCX70
V
CB
= 32 V, I
E
= 0 , T
A
= 150 °C, BCW60, ...60FF
V
CB
= 45 V, I
E
= 0 , T
A
= 150 °C, BCX70
I
CBO
-
-
-
-
-
-
-
-
0.02
0.02
20
20
µA
Emitter-base cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
20
nA
DC current gain-
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp. G
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp. B/ H
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp. C/ J/ FF
I
C
= 10 µA, V
CE
= 5 V, h
FE
-grp. D/ K
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp. G
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp. B/ H
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp. C/ J/ FF
I
C
= 2 mA, V
CE
= 5 V, h
FE
-grp. D/ K
I
C
= 50 mA, V
CE
= 1 V, h
FE
-grp. G
I
C
= 50 mA, V
CE
= 1 V, h
FE
-grp. B/ H
I
C
= 50 mA, V
CE
= 1 V, h
FE
-grp. C/ J/ FF
I
C
= 50 mA, V
CE
= 1 V, h
FE
-grp. D/ K
h
FE
20
20
40
100
120
180
250
380
50
70
90
100
140
200
300
460
170
250
350
500
-
-
-
-
-
-
-
-
220
310
460
630
-
-
-
-
-