Fairchild Semiconductor N/A TIP147TTU Datenbogen
Produktcode
TIP147TTU
TIP145T/146T/147T
— PNP Epit
axial
Silic
on Darlington T
ransistor
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP145T/146T/147T Rev. C
1
August 2008
TIP145T/146T/147T
PNP Epitaxial Silicon Darlington Transistor
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000@ V
CE
= - 4V, I
C
= - 5A (Min.)
• Industrial Use
• Complement to TIP140T/141T/142T
• Complement to TIP140T/141T/142T
Absolute Maximum Ratings *
T
C
=25
°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
BV
CBO
Collector-Base Voltage : TIP145T
: TIP146T
: TIP147T
: TIP147T
- 60
- 80
- 80
- 100
V
V
V
V
V
BV
CEO
Collector-Emitter Voltage : TIP145T
: TIP146T
: TIP147T
: TIP147T
- 60
- 80
- 80
- 100
V
V
V
V
V
BV
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 10
A
I
CP
Collector Current (Pulse)
- 15
A
I
B
Base Current (DC)
- 0.5
A
P
C
Collector Dissipation (T
C
=25
°C)
80
W
T
J
Junction Temperature
150
°C
T
STG
Storage Junction Temperature Range
- 65 ~ 150
°C
TO-220
1
1.Base 2.Collector 3.Emitter
Equivalent Circuit
B
E
C
R1
R2
R1
8k
Ω
≅
R2
0.12k
Ω
≅