Korea Electronics N/A Emitter reverse voltag BC817-40 Datenbogen
Produktcode
BC817-40
2009. 2. 19
1/2
SEMICONDUCTOR
TECHNICAL DATA
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC807.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
B
C
D
E
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
2.40+0.30/-0.20
G
1.90
H
J
K
L
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+_
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification 16:100
250 , 25:160
400 , 40:250
630
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain (Note)
h
FE
(1)
V
CE
=1V, I
C
=100mA
100
-
630
h
FE
(2)
V
CE
=1V, I
C
=500mA
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
0.7
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=500mA
-
-
1.2
V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA, f=100MHz
100
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
800
mA
Emitter Current
I
E
-800
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
TYPE
BC817-16
BC817-25
BC817-40
MARK
6A
6B
6C
* : Package Mounted On 99.9% Alumina 10
8
0.6mm.
MARK SPEC
Type Name
Marking
Lot No.