Fairchild Semiconductor N/A TIP142TTU Datenbogen
Produktcode
TIP142TTU
T
IP
1
4
0
T
/
T
IP
1
4
1
T
/
T
IP
1
4
2
T
—
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N
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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP140T / TIP141T / TIP142T Rev. B2
1
July 2009
TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington Transistor
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000 @ V
CE
= 4V, I
C
= 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
• Complement to TIP145T/146T/147T
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : TIP140T
: TIP141T
: TIP142T
: TIP142T
60
80
80
100
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP140T
: TIP141T
: TIP142T
: TIP142T
60
80
80
100
V
V
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
10
A
I
CP
Collector Current (Pulse)
15
A
I
B
Base Current (DC)
0.5
A
P
C
Collector Dissipation (T
C
=25°C)
80
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
-65 to +150
°C
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1
R2
R1
8kΩ
≅
R2
0.12kΩ
≅