Fairchild Semiconductor N/A PZTA14 Datenbogen

This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A.  Sourced
from Process 05.

Absolute Maximum Ratings*      

TA = 25°C unless otherwise noted

V

CES

Collector-Emitter Voltage

30

V

V

CBO

Collector-Base Voltage

30

V

V

EBO

Emitter-Base Voltage

10

V

I

C

Collector Current - Continuous

1.2

A

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

P

D

Total Device Dissipation

Derate above 25

°

C

625

5.0

350

2.8

1,000

8.0

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

357

125

°

C/W

TA = 25°C unless otherwise noted

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

2

.

 

1997 Fairchild Semiconductor Corporation

A14, Rev B