Fairchild Semiconductor N/A TIP 110 NPN Case type TO 220 I(C TIP110 Datenbogen
Produktcode
TIP110
T
IP
1
10
/T
IP
1
11
/T
IP
1
12
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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
TIP110/TIP111/TIP112 Rev. 1.0.0
1
November 2008
TIP110/TIP111/TIP112
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• Complementary to TIP115/116/117
• High DC Current Gain : h
• Complementary to TIP115/116/117
• High DC Current Gain : h
FE
=1000 @ V
CE
=4V, I
C
=1A(Min.)
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Industrial Use
Absolute Maximum Ratings*
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage : TIP110
: TIP111
: TIP112
: TIP112
60
80
80
100
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP110
: TIP111
: TIP112
: TIP112
60
80
80
100
V
V
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
2
A
I
CP
Collector Current (Pulse)
4
A
I
B
Base Current (DC)
50
mA
P
C
Collector Dissipation (T
a
=25
°C)
2
W
Collector Dissipation (T
C
=25
°C)
50
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 ~ 150
°C
1.Base 2.Collector 3.Emitter
1
TO-220
Equivalent Circuit
B
E
C
R1
R2
R1
10k
W
@
R2
0.6k
W
@