Fairchild Semiconductor N/A MJE 3055 NPN Case type TO 220 I( MJE3055T Datenbogen
Produktcode
MJE3055T
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE
3055T
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse test: PW
≤
300
µ
s, duty cycle
≤
2% Pulse
Symbol
Parameter
Value
Units
V
CBO
Collector -Base Voltage
70
V
V
CEO
Collector-Emitter Voltage
60
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
10
A
I
B
Base Current
6
A
P
C
Collector Dissipation (T
C
=25
°
C)
75
W
P
C
Collector Dissipation (T
a
=25
°
C)
0.6
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 200mA, I
B
= 0
60
V
I
CEO
Collector Cut-off Current
V
CE
= 30V, I
B
= 0
700
µ
A
I
CEX1
I
CEX2
Collector Cut-off Current
V
CE
= 70V, V
BE
(off) = -1.5V
V
CE
= 70V, V
BE
(off) = -1.5V
@ T
C
= 150
°
C
1
5
5
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
5
mA
h
FE
*DC Current Gain
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 10A
20
5
100
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= 4A, I
B
= 0.4A
I
C
= 10A, I
B
= 3.3A
1.1
8
V
V
V
V
BE
(on)
*Base-Emitter On Voltage
V
CE
= 4V, I
C
= 4A
1.8
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 500mA
2
MHz
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to I
C
=10A
• High Current Gain-Bandwidth Product : f
T
= 2MHz (Min.)
1.Base 2.Collector 3.Emitter
1
TO-220