Fairchild Semiconductor N/A KSC1845FTA Datenbogen
Produktcode
KSC1845FTA
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002
KSC184
5
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
50
mA
I
B
Base Current
10
mA
P
C
Collector Power Dissipation
500
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
=120V, I
E
=0
50
nA
I
EBO
Emitter Cut-off Current
V
EB
=5V, I
C
=0
50
nA
h
FE1
h
FE2
DC Current Gain
V
CE
=6V, I
C
=0.1mA
V
CE
=6V, I
C
=1mA
150
200
200
580
600
600
1200
V
BE
(on)
Base-Emitter On Voltage
V
CE
=6V, I
C
=1mA 0.55
0.59
0.65
V
V
BE
(sat)
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=1mA
0.07
0.3
V
f
T
Current Gain Bandwidth Product
V
CE
=6V, I
C
=1mA
50
110
MHz
C
ob
Output Capacitance
V
CB
=30V, I
E
=0, f=1MHz
1.6
2.5
pF
NL
Noise Level
25
40
mV
Classification P
F
E
U
h
FE2
200 ~ 400
300 ~ 600
400 ~ 800
600 ~ 1200
KSC1845
Audio Frequency Low Noise Amplifier
• Complement to KSA992
1. Emitter 2. Collector 3. Base
TO-92
1