Fairchild Semiconductor N/A KSC2333YTU Datenbogen

Produktcode
KSC2333YTU
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©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC233
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings 
T
C
=25
°
C unless otherwise noted
*PW
350
µ
s, Duty Cycle
10%
Electrical Characteristics 
TC=25
°
C unless otherwise noted
* Pulse Test: PW
350
µ
s, Duty Cycle
2%Pulsed
h
FE
 Classification
Symbol
Parameter
Value
Units
 V
CBO
 Collector-Base Voltage
500
V
 V
CEO
 Collector-Emitter Voltage
400
V
 V
EBO
 Emitter-Base Voltage
  7
V
 I
C
 Collector Current (DC)
  2
A
 
I
CP
*Collector Current (Pulse)
  4
A
 
I
B
 Base Current (DC)
  1
A
 P
C
 Collector Dissipation (T
C
=25
°
C)
 15
W
 T
J
 Junction Temperature
150
°
C
 T
STG
 Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
 V
CEO
(sus)
 Collector-Emitter Sustaining Voltage
 I
= 0.5A, I
=0.1A, L = 1mH
400
V
 
V
CEX
(sus)1
 Collector-Emitter Sustaining Voltage
 I
= 0.5A, I
B1
 = -I
B2
 = 0.1A
 T
= 125
°
C, L = 180
µ
H, clamped
450
V
 V
CEX
(sus)2
 Collector-Emitter Sustaining Voltage
 I
= 1A, I
B1
 = 0.2A, -I
B2
 =0.2A
 T
C
= 125
°
C, L = 180
µ
H, clamped
400
V
 
I
CBO
 Collector Cut-off Current
 V
CB 
= 400V, I
= 0
 10
µ
A
 I
CER
 Collector Cut-off Current
 V
CE 
= 400V, R
BE 
=51
Ω
, T
C
 = 125
°
C
 
 
1
mA
 I
CEX1
 Collector Cut-off Current
 V
CE 
= 400V, V
BE
(off) = -5V
 10
µ
A
 I
CEX2
 Collector Cut-off Current
 
 V
CE 
= 400V, V
BE
(off) = -5V @
 T
C
 = 125
°
C
1
mA
 I
EBO
 Emitter Cut-off Current
 V
EB 
= 5V, I
= 0
 10
µ
A
 h
FE1
 
h
FE2
* DC Current Gain
 V
CE 
= 5V, I
= 0.1A
 V
CE 
= 5V, I
= 0.5A
 20
 10
 80
 V
CE
(sat)
* Collector-Emitter Saturation Voltage
 I
= 0.5A, I
= 0.1A
  1
V
 V
BE
(sat) 
* Base-Emitter Saturation Voltage
 I
= 0.5A, I
= 0.1A
1.2
V
 t
ON
 Turn ON Time
 V
CC 
= 150V, I
= 0.5A
 I
B1
 = - I
B2
 = 0.1A 
 R
L
 = 300
Ω
  1
µ
s
 t
STG
 Storage Time
2.5
µ
s
 t
F
 Fall Time
  1
µ
s
Classification
R
O
Y
h
FE1
20 ~ 40
30 ~ 60
40 ~ 80
KSC2333
High Speed Switching Application 
• Low Collector Saturation Voltage 
• Specified of Reverse Biased SOA With Inductive Load
1.Base    2.Collector    3.Emitter
1
TO-220