Rohm Semiconductor IMZ1AT108 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V IMZ1AT108 Datenbogen
Produktcode
IMZ1AT108
EMZ1 / UMZ1N / IMZ1A
Transistors
Rev.A 4/4
Tr
2
(PNP)
−
0.2
COLLECTOR CURRENT : Ic
(
mA)
−
50
−
20
−
10
−
5
−
2
−
1
−
0.5
−
0.2
−
0.1
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
−
1.4
−
1.6
V
CE
=
−
6V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Ta=100˚C
25˚C
−
40˚C
Fig.12 Grounded emitter propagation
characteristics
−
0.4
−
4
−
8
−
1.2
0
−
2
−
6
−
10
−
0.8
−
1.6
−
2.0
−
3.5
µ
A
−
7.0
−
10.5
−
14.0
−
17.5
−
21.0
−
24.5
−
28.0
−
31.5
I
B
=0
Ta=25˚C
−
35.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.13 Grounded emitter output
characteristics ( I )
characteristics ( I )
−
40
−
80
−
5
−
3
−
4
−
2
−
1
−
20
−
60
−
100
0
I
B
=0
Ta=25˚C
−
50
µ
A
−
100
−
150
−
200
−
250
−
500
−
450
−
400
−
350
−
300
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.14 Grounded emitter output
characteristics ( II )
characteristics ( II )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.15 DC current gain vs. collector
current ( I )
current ( I )
500
200
100
50
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
Ta=25˚C
V
CE
=
−
5V
−
3V
−
1V
500
200
100
50
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
V
CE
=
−
6V
Ta=100˚C
−
40˚C
25˚C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.16 DC current gain vs. collector
current ( II )
current ( II )
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
1
−
0.5
−
0.2
−
0.05
Ta=25˚C
I
C
/I
B
=50
20
10
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
Fig.17 Collector-emitter saturation
voltage vs. collector current ( I )
voltage vs. collector current ( I )
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
1
−
0.5
−
0.2
−
0.05
l
C
/l
B
=10
Ta=100˚C
25˚C
−
40˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.18 Collector-emitter saturation
voltage vs. collector current ( II )
voltage vs. collector current ( II )
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
Ta=25˚C
V
V
CE
=
−
12V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.19 Gain bandwidth product vs.
emitter current
emitter current
-0.5
-20
2
5
10
-1
-2
-5
-10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Fig.20 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25˚C
f
=1MHz
I
E
=0A
I
C
=0A