Rohm Semiconductor UMB11NTN Bipolar Transistor Emitter reverse voltage U(CEO) 50 V UMB11NTN Datenbogen
Produktcode
UMB11NTN
EMB11 / UMB11N / IMB11A
Transistors
Rev.A
1/2
General purpose
(dual digital transistors)
(dual digital transistors)
EMB11 / UMB11N / IMB11A
zFeatures
1) Two DTA114E chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
zStructure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
1
and
DTr
2
.
zEquivalent circuit
EMB11 / UMB11N
IMB11A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
2
R
1
R
2
=10k
Ω
R
1
=10k
Ω
R
2
=10k
Ω
R
1
=10k
Ω
zAbsolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Unit
V
CC
−
50
V
−
40
V
V
IN
10
I
O
−
50
mA
I
C (Max.)
−
100
Tj
150
˚C
Tstg
−
55 to
+
150
˚C
Pd
EMB11, UMB11N
150 (TOTAL)
mW
IMB11A
300 (TOTAL)
∗
1
∗
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
dissipation
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
zExternal dimensions (Unit : mm)
ROHM : EMT6
EMB11
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
UMB11N
Abbreviated symbol : B11
Abbreviated symbol : B11
Abbreviated symbol : B11
ROHM : SMT6
EIAJ : SC-74
EIAJ : SC-74
IMB11A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6