Fairchild Semiconductor N/A KSB772YSTU Datenbogen
Produktcode
KSB772YSTU
©2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
KSB772
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
* PW
≤
10ms, Duty Cycle
≤
50%
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
350
µ
s, Duty Cycle
≤
2%
h
FE
Classificntion
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 40
V
V
CEO
Collector-Emitter Voltage
- 30
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 3
A
I
CP
*Collector Current (Pulse)
- 7
A
I
B
Base Current (DC)
- 0.6
A
P
C
Collector Dissipation (T
C
=25
°
C)
10
W
Collector Dissipation (T
a
=25
°
C)
1
W
R
θ
ja
Junction to Ambient
132
°
C/W
R
θ
jc
Junction to Case
13.5
°
C/W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= - 30V, I
E
= 0
- 1
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= - 3V, I
C
= 0
- 1
µ
A
h
FE1
h
FE2
* DC Current Gain
V
CE
= - 2V, I
C
= - 20mA
V
CE
= - 2V, I
C
= - 1A
30
60
60
220
160
160
400
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 0.2A
- 0.3
- 0.5
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= - 2A, I
B
= - 0.2A
- 1.0
- 2.0
V
f
T
Current Gain Bandwidth Product
V
CE
= - 5V, I
E
= - 0.1A
80
MHz
C
ob
Output Capacitance
V
CB
= - 10V, I
E
= 0
f = 1MHz
55
pF
Classification
R
O
Y
G
h
FE2
60 ~ 120
100 ~ 200
160 ~ 320
200 ~ 400
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
• Complement to KSD882
1
TO-126
1. Emitter 2.Collector 3.Base