Rohm Semiconductor IMX3T108 Bipolar Transistor Emitter reverse voltage U(CEO) 50 V IMX3T108 Datenbogen
Produktcode
IMX3T108
EMX3 / UMX3N / IMX3
Transistors
Rev.A
1/3
General purpose (dual transistors)
EMX3 / UMX3N / IMX3
zFeatures
1) Two 2SC2412AK chips in a EMT or UMT or SMT
package.
zEquivalent circuits
(1)
(2)
(3)
(4)
(5)
(6)
(6)
(5)
(4)
(3)
(2)
(1)
EMX3 / UMX3N
IMX3
Tr
2
Tr
1
Tr
2
Tr
1
zAbsolute maximum ratings (Ta=25
°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
150
300(TOTAL)
150(TOTAL)
EEMX3 / UMX3N
IMX3
150
−
55
to
+
150
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
dissipation
Junction temperature
Storage temperature
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
1
∗
2
zPackage, marking, and packaging specifications
Type
EMX3
EMT6
X3
T2R
8000
UMX3N
UMT6
X3
TR
3000
IMX3
SMT6
X3
T108
3000
Package
Marking
Code
Basic ordering unit (pieces)
zExternal dimensions (Unit : mm)
2.0
1.3
0.9
0.7
0.65
0.65
UMX3N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
EIAJ : SC-88
0~0.1
( 6
)
0.15
0.1Min.
2.1
0.2
1.25
( 1
)
( 4
)
( 3
)
( 2
)
( 5
)
IMX3
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
EIAJ : SC-74
( 6
)
( 5
)
( 4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions
ROHM : EMT6
EMX3
0.22
1.2
1.6
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6