Fairchild Semiconductor N/A MPSA05RA Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. B1, November 2002

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

* Pulse Test: Pulse Width 

≤

 300

µ

s, Duty Cycle 

≤

 2.0%

T

A

=25

°

C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” 

× 

0.06"

V

CEO

Collector-Emitter Voltage

60

V

V

CBO

Collector-Base Voltage

60

V

V

EBO

Emitter-Base Voltage

4.0

V

I

C

Collector current

- Continuous

500

mA

T

J

, T

stg

Junction and Storage Temperature

-55 ~ +150

°

C

V

(BR)CEO

Collector-Emitter Breakdown Voltage *

I

C

 = 1mA, I

B

 = 0

60

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

C

 = 100

µ

A, I

C

 = 0

4

V

I

CEO

Collector Cutoff Current

V

CE

 = 60V, I

B

 = 0

0.1

µ

A

I

CBO

Emitter Cutoff Current

V

CB

 = 60V, I

E

 = 0

0.1

µ

A

h

FE

DC Current Gain

I

C

 = 10mA, V

CE

 = 1.0V

I

C

 = 100mA, V

CE

 = 1.0V

100
100

V

CE(sat)

Collector-Emitter Saturation Voltage

I

C

 = 100mA, I

B

 = 10mA

0.25

V

V

BE(on)

Base-Emitter On Voltage

I

C

 = 100mA, V

CE

 = 1.0V

1.2

V

f

T

Current Gain Bandwidth Product

I

C

 = 10mA, V

CE

 = 2V, 

f = 100MHz

100

MHz

P

D

Total Device Dissipation
Derate above 25

°

C

625

5

350

2.8

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

357

°

C/W

• This device is designed for general purpose amplifier 

applications at collector currents to 300mA.

• Sourced from process 10.

SOT-23

1. Base   2. Emitter  3. Collector 

1

2

3

Mark: 1H

TO-92

1

1. Emitter   2. Base   3. Collector