Fairchild Semiconductor N/A MMBT6428 Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. A, October 2002

T

C

=25

°

C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.

T

C

=25

°

C unless otherwise noted

*Pulse Test: Pulse Width 

≤

 300 

µ

s, Duty Cycle 

≤

 2.0%

V

CEO

Collector-Emitter Voltage

50

V

V

CBO

Collector-Base Voltage

60

V

I

C

Collector Current

- Continuous

500

mA

T

J

, T

STG

Operating and Storage Junction Temperature Range

- 55 ~ 150

°

C

V

(BR)CEO

Collector-Emitter Breakdown Voltage *

I

C 

= 1.0mA, I

B

 = 0

50

V

V

(BR)CBO

Collector-Base BreakdownVoltage 

I

C

 = 100

µ

A, I

E

 = 0

60

V

I

CEO

Collector Cut-off Current

V

CE

 = 30V, I

B

 = 0

0.1

µ

A

I

CBO

Collector Cut-off Current

V

CB

 = 30V, I

E

 = 0

10

nA

I

EBO

Emitter Cut-off Current

V

EB

 = 5.0V, I

B

 = 0

10

nA

h

FE

DC Current Gain

V

CE

 = 5.0V, I

C

 = 10

µ

A

V

CE

 = 5.0V, I

C

 = 100

µ

A

V

CE

 = 5.0V, I

C

 = 1.0mA

V

CE

 = 5.0V, I

C

 = 10mA

250
250
250
250

650

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C 

= 10mA, I

B 

= 0.5mA

I

C 

= 100mA, I

B 

= 5.0mA

0.2
0.6

V

V

BE

(on)

Base-Emitter On Voltage

V

CE 

= 5.0V, I

C 

= 1.0mA

0.56

0.66

V

f

T

Current gain Bandwidth Product

V

CE 

= 5.0V, I

C 

= 1.0mA, 

f = 100MHz

100

700

MHz

C

obo

Output Capacitance

V

CB

 = 10V, I

E

 = 0, f = 1.0MHz

3.0

pF

C

ibo

Input Capacitance

V

EB

 = 0.5V, I

C

 = 0, f = 1.0MHz

8.0

pF

• This device designed for general pupose amplifier applications at 

collector currents to 300mA

• Sourced from process 10.

SOT-23

1. Base  2. Emitter  3. Collector 

1

2

3