Fairchild Semiconductor N/A MMBT5962 Datenbogen
Produktcode
MMBT5962
2N5962/ MMBT5962
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 5.0 mA, I
B
= 0
45
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
µ
A, I
E
= 0
45
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
8.0
V
I
CBO
Collector Cutoff Current
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 65
°
C
2.0
50
nA
nA
nA
I
EBO
Emitter Cutoff Current
V
EB
= 5.0 V, I
C
= 0
1.0
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 10
µ
A
V
CE
= 5.0 V, I
C
= 100
µ
A
V
CE
= 5.0 V, I
C
= 1.0 mA
V
CE
= 5.0 V, I
C
= 10 mA
450
500
550
600
500
550
600
1400
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 0.5 mA
0.2
V
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 5.0 V, I
C
= 1.0 mA
0.5
0.7
V
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V
4.0
pF
C
eb
Emitter-Base Capacitance
V
EB
= 0.5 V
6.0
pF
h
fe
Small-Signal Current Gain
I
C
= 10 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
600
1.0
200
NF
Noise Figure
V
CE
= 5.0 V, I
C
= 10
µ
A,
R
S
= 10 k
Ω
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
C
= 100
µ
A,
R
S
= 1.0 k
Ω
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
C
= 100
µ
A,
R
S
= 10 k
Ω
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
C
= 100
µ
A,
R
S
= 100 k
Ω
, f = 1.0 kHz,
B
W
= 400 Hz
V
CE
= 5.0 V, I
C
= 10
µ
A,
R
S
= 10 k
Ω
, f = 10 Hz -10 kHz
B
W
= 15.7 kHz
3.0
6.0
4.0
8.0
3.0
dB
dB
dB
dB
dB
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%