Fairchild Semiconductor N/A MMBT5088 Datenbogen

This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1

µ

A to 50 mA.

Absolute Maximum Ratings*      

TA = 25°C unless otherwise noted

V

CEO

Collector-Emitter Voltage

30
25

V
V

V

CBO

Collector-Base Voltage

35
30

V
V

V

EBO

Emitter-Base Voltage

4.5

V

I

C

Collector Current - Continuous

100

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

TA = 25°C unless otherwise noted

P

D

Total Device Dissipation

Derate above 25

°

C

625

5.0

350

2.8

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

357

°

C/W

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 

2001 Fairchild Semiconductor Corporation

2N5088/2N5089/MMBT5088/MMBT5089, Rev A