Fairchild Semiconductor N/A MMBT5087 Datenbogen
Produktcode
MMBT5087
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N50
86/
2N
5
5
087/
MM
BT508
7
Absolute Maximum Ratings*
T
a
=25
°
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
-50
V
V
CBO
Collector-Base Voltage
-50
V
V
EBO
Emitter-Base Voltage
-3.0
V
I
C
Collector current
- Continuous
-100
mA
T
J
, T
stg
Junction and Storage Temperature
-55 ~ +150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
I
C
= -1.0mA, I
B
= 0
-50
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -100
µ
A, I
E
= 0
-50
V
I
CEO
Collector Cutoff Current
V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
-10
-50
-50
nA
nA
nA
I
CBO
Emitter Cutoff Current
V
EB
= -3.0V, I
C
= 0
-50
nA
On Characteristics
h
FE
DC Current Gain
I
C
= -100
µ
A, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
5086
5087
5086
5087
5086
5087
5087
5086
5087
5086
5087
150
250
150
250
150
250
250
150
250
150
250
500
800
800
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -10mA, I
B
= -1.0mA
-0.3
V
V
BE(on)
Base-Emitter On Voltage
I
C
= -1.0mA, V
CE
= -5.0V
-0.85
V
Small Signal Characteristics
f
T
Current Gain Bandwidth Product
I
C
= -500
µ
A, V
CE
= -5.0V, f = 20MHz
40
MHz
C
cb
Collector-Base Capacitance
V
CB
= -5.0V, I
E
= 0, f = 100KHz
4.0
pF
h
fe
Small-Signal Current Gain
I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
5086
5087
5087
150
250
250
600
900
900
NF
Noise Figure
I
C
= -100
µ
A, V
CE
= -5.0V
R
S
= 3.0k
Ω
, f = 1.0KHz
I
C
= -20
µ
A, V
CE
= -5.0V
R
S
= 10k
Ω
f = 10Hz to 15.7KHz
5086
5087
5087
5086
5087
5087
3.0
2.0
2.0
3.0
2.0
2.0
dB
dB
dB
dB
dB
dB
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
collector currents to 50mA.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 2Q
TO-92
1
1. Emitter 2. Base 3. Collector