Fairchild Semiconductor N/A BCX71K Datenbogen

© 1997 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BCX71K Rev. 1.1.0

2 

(3)

Values are at

 

T

A

 = 25°C unless otherwise noted.

3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Values are at T

A

 = 25°C unless otherwise noted. 

P

D

Total Device Dissipation                          

350

mW

Derate Above T

A

 = 25°C

2.8

mW/°C

R

θJA

Thermal Resistance, Junction to Ambient

357

°C/W

V

(BR)CEO

Collector-Emitter Breakdown Voltage I

C 

= -1.0 mA, I

B 

= 0

-45

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E 

= -10 

μA, I

C 

= 0

-5.0

V

I

CES

Collector Cut-Off Current

V

CE 

= -45 V, I

E 

= 0

-20

nA

V

CE 

= -45 V, I

E 

= 0, 

T

A

 = 100°C

-20

μA

h

FE

DC Current Gain

I

C 

= -10 

μA, V

CE 

= -5.0 V 

100

I

C 

= -2.0 mA, V

CE 

= -5.0 V

380

630

I

C 

= -50 mA, V

CE 

= -1.0 V

110

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C 

= -10 mA, I

B 

= -0.25 mA

-0.06

-0.25

V

I

C 

= -50 mA, I

B 

= -1.25 mA

-0.12

-0.55

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C 

= -10 mA, I

B 

= -0.25 mA

-0.60

-0.85

V

I

C 

= -50 mA, I

B 

= -1.25 mA

-0.68

-1.05

V

BE

(on)

Base-Emitter On Voltage

I

C 

= -2.0 mA, V

CE 

= -5.0 V

-0.60

-0.75

V

C

ob

Output Capacitance

V

CB 

= -10 V, I

E 

= 0, 

f = 1.0 MHz

6.0

pF

NF

Noise Figure

I

C

 = -0.2 mA, V

CE 

= -5.0 V, 

R

S 

= 2.0 k

Ω, f = 1.0 kHz,

B

W

 = 200 Hz

6.0

dB

t

on

Turn-On Time

I

C 

= -10 mA, I

B1 

= -1.0 mA

150

ns

t

off

Turn-Off Time

I

B2 

= -1.0 mA, V

BB 

= -3.6 V,

R

1 

= R

2 

= 5.0 k

Ω, 

R

L 

= 990 

Ω,

800

ns