Fairchild Semiconductor N/A BCX70J Datenbogen
Produktcode
BCX70J
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
BCX70J
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
•
Refer to KST3904 for graphs
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
45
V
V
CEO
Collector-Emitter Voltage
45
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
200
mA
P
C
Collector Power Dissipation
350
mW
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=2.0mA, I
B
=0
45
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=1.0
µ
A, I
C
=0
5
V
I
CES
Collector Cut-off Current
V
CE
=32V, V
BE
=0
20
nA
I
EBO
Emitter Cut-off Current
V
EB
=4V, I
C
=0
20
nA
h
FE
DC Current Gain
V
CE
=5V, I
C
=10
µ
A
V
CE
=5V, I
C
=2.0mA
V
CE
=1V, I
C
=50mA
40
250
90
460
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
0.35
0.55
0.55
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
0.6
0.7
0.7
0.85
1.05
1.05
V
V
V
V
BE
(on)
Base-Emitter On Voltage
I
C
=2.0mA, V
CE
=5V
0.55
0.75
V
f
T
Current Gain Bandwidth Product
I
C
=10mA, V
CE
=5V, f=100MHz
125
MHz
C
ob
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
4.5
pF
NF
Noise Figure
V
CE
=5V, I
C
=0.2mA
R
S
=2K
Ω
, f=1KHz
6
dB
t
ON
Turn On Time
I
C
=10mA, I
B1
=1.0mA
150
ns
t
OFF
Turn Off Time
V
BB
=3.6V, I
B2
=1.0mA
R
1
=R
2
=5K
Ω
, R
L
=990
Ω
800
ns
BCX70J
General Purpose Transistor
A J
Marking
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3