Fairchild Semiconductor N/A KSA1010YTU Datenbogen
Produktcode
KSA1010YTU
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
KSA101
0
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
* PW
≤
300
µ
s, Duty Cycle
≤
10%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 100
V
V
CEO
Collector-Emitter Voltage
- 100
V
V
EBO
Emitter-Base Voltage
- 7
V
I
C
Collector Current (DC)
- 7
A
I
CP
*Collector Current (Pulse)
- 15
A
I
B
Base Current
- 3.5
A
P
C
Collector Dissipation (T
C
=25
°
C)
40
W
Collector Dissipation (T
a
=25
°
C)
1.5
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
KSA1010
High Speed High Voltage Switching
• Industrial Use
• Complement to KSC2334
• Complement to KSC2334
1.Base 2.Collector 3.Emitter
1
TO-220