Fairchild Semiconductor N/A MPSA29 Datenbogen

This device is designed for applications requiring extremely
high current gain at collector currents  to 500 mA. Sourced
from Process 03. See MPSA28 for characteristics.

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TA = 25°C unless otherwise noted

V

CES

Collector-Emitter Voltage

100

V

V

CBO

Collector-Base Voltage

100

V

V

EBO

Emitter-Base Voltage

12

V

I

C

Collector Current - Continuous

800

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

P

D

Total Device Dissipation

Derate above 25

°

C

625

5.0

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

°

C/W

 

1997 Fairchild Semiconductor Corporation