Fairchild Semiconductor N/A BD438STU Datenbogen
Produktcode
BD438STU
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
BD434/
436/
438
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: BD434
: BD436
: BD438
: BD436
: BD438
- 22
- 32
- 45
- 32
- 45
V
V
V
V
V
V
CES
Collector-Emitter Voltage
: BD434
: BD436
: BD438
: BD436
: BD438
- 22
- 32
- 45
- 32
- 45
V
V
V
V
V
V
CEO
Collector-Emitter Voltage
: BD434
: BD436
: BD438
: BD436
: BD438
- 22
- 32
- 45
- 32
- 45
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 4
A
I
CP
*Collector Current (Pulse)
- 7
A
I
B
Base Current
- 1
A
P
C
Collector Dissipation (T
C
=25
°
C)
36
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
BD434/436/438
Medium Power Linear and Switching
Applications
Applications
• Complement to BD433, BD435 and BD437 respectively
1
TO-126
1. Emitter 2.Collector 3.Base