Fairchild Semiconductor N/A PZTA56 Datenbogen

 

©2006 Fairchild Semiconductor Corporation

 

www.fairchildsemi.com

 

February 2006

 

MPSA56/MMBTA56/PZTA56 Rev. 1.0.2

 

This device is designed for general purpose amplifier
applications at collector currents to 300mA. Sourced
from Process 73

 

T

 

A

 

 = 25

 

°

 

C unless otherwise specified.

 

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

 

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3. All voltages (V) and currents (A) are negative polarity for PNP transistors.

 

T

 

A

 

 = 25°C unless otherwise noted.

 

*Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06."

**Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6 cm

 

2

 

. 

 

Collector-Emitter Voltage

V

 

CES

 

-80

V

Collector-Base Voltage

V

 

CBO

 

-80

V

Emitter-Base Voltage

V

 

EBO

 

-4.0

V

Collector Current – Continuous

I

 

C

 

-500

mA

Operating and Storage Junction Temperature Range

T

 

J

 

, T

 

STG

 

-55 to +150

 

°

 

C

 

Total Device Dissipation, 
   Derate above 25°C

P

 

D

 

625 

5.0

350 

2.8

1,000 

8.0

mW

mW/°C

Thermal Resistance, Junction to Case 

R

 

θ

 

JC

 

  

83.3

°C/W

Thermal Resistance, Junction to Ambient 

R

 

θ

 

JA

 

 

200

357

125

°C/W