Fairchild Semiconductor N/A MJD44H11TF Datenbogen
Produktcode
MJD44H11TF
MJ
D44H1
1
— NP
N E
p
it
a
x
ial Silicon T
ransistor
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MJD44H11 Rev. B1
1
March 2009
MJD44H11
NPN Epitaxial Silicon Transistor
• General Purpose Power and Switching Such as Output or Driver Stages in Applications
• D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, "- I" Suffix)
• Electrically Similar to Popular MJE44H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
• D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, "- I" Suffix)
• Electrically Similar to Popular MJE44H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage
Absolute Maximum Ratings
T
a
= 25
°C unless otherwise noted
Thermal Characteristics
T
a
= 25
°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
80
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
8
A
I
CP
Collector-Current (Pulse)
16
A
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
T
c
= 25
°C
T
a
= 25
°C
20
1.75
W
R
θJC
Thermal Resistance, Junction to Case
6.25
°
C/W
R
θJA
Thermal Resistance, Junction to Ambient
71.4
°
C/W
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1