Fairchild Semiconductor N/A BDW93CTU Datenbogen

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BDW93CTU
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93/A/B/C
Electrical Characteristics 
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=300
µ
s, duty Cycle =1.5% Pulsed
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
 BV
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: BDW93
: BDW93A
: BDW93B
: BDW93C
 I
= 100mA, I
= 0
45
60
80
100
V
V
V
V
I
CBO
 Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
 V
CB 
= 45V, I
= 0
 V
CB 
= 60V, I
= 0
 V
CB 
= 80V, I
= 0
 V
CB 
= 100V, I
= 0
  100
  100
  100
  100
µ
A
µ
A
µ
A
µ
A
I
CEO
 Collector Cut-off Current
: BDW93
: BDW93A
: BDW93B
: BDW93C
 V
CE 
= 45V, I
= 0
 V
CE 
= 60V, I
= 0
 V
CE 
= 80V, I
= 0
 V
CE 
= 100V, I
= 0
   
   1
    1
    1
    1
mA
mA
mA
mA
I
EBO  
 Emitter Cut-off Current
 V
EB 
= 5V, I
= 0
    2
mA
h
FE
* DC Current Gain
 V
CE 
= 3V, I
= 3A
 V
CE 
= 3V, I
= 5A
 V
CE 
= 3V, I
= 10A
1000
 750
 100
20000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
 I
= 5A, I
= 20mA
 I
= 10A, I
= 100mA
 
    2
    3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
 I
= 5A, I
= 20mA
 I
= 10A, I
= 100mA
  2.5
    4
V
V
V
F
* Parallel Diode Forward Voltage
 I
= 5A
 I
= 10A
1.3
1.8
    2
    4
V
V