Fairchild Semiconductor N/A FZT790A Datenbogen
Produktcode
FZT790A
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
FZT790A
Absolute Maximum Ratings *
T
C
=25
°
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
* Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
Thermal Characteristics
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
-40
V
V
CBO
Collector-Base Voltage
-50
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
- Continuous
-3
A
T
J
, T
STG
Operating and Storage Junction Temperature Range
- 55 ~ +150
°
C
Symbol
Parameter
Test Conditions
Min.
Max.
Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA, I
B
= 0
-40
V
BV
CBO
Collector-Emitter Breakdown Voltage
I
C
= -100
µ
A, I
E
= 0
-50
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -100
µ
A, I
C
= 0
-5.0
V
I
CBO
Collector Cut-off Current
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 100
°
C
-100
-10
nA
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= -4V, I
C
= 0
-100
nA
On Characteristics *
h
FE
DC Current Gain
V
CE
= -2.0V, I
C
= -10mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1.0A
V
CE
= -2.0V, I
C
= -2.0A
300
250
200
150
250
200
150
800
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -5.0mA
I
C
= -1.0A, I
B
= -10mA
I
C
= -2.0A, I
B
= -50mA
-0.25
-0.45
-0.75
-0.45
-0.75
mV
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= -1.0A, I
B
= -10mA
-1.0
V
V
BE(on)
Base-Emitter On Voltage
I
C
= -1.0A, V
CE
= -2.0V
-1.0
V
Small Signal Characteristics
f
T
Transition Frequency
I
C
= -50mA, V
CE
= -5.0V,
f = 50MHz
100
MHz
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
2
W
R
θ
JA
Thermal Resistance, Junction to Ambient
62.5
°
C/W
FZT790A
PNP Low Saturation Transistor
• These devices are designed with high current gain and low saturation
voltage with collector currents up to 3A continuous.
SOT-223
1. Base 2.4. Collector 3. Emitter
1
2
4
3