Fairchild Semiconductor N/A KSA473YTU Datenbogen

Produktcode
KSA473YTU
Seite von 6
KSA473 — PNP Epit
axial Silicon
 T
ransistor
© 2009 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
KSA473 Rev. A2
August 2009
KSA473 
PNP Epitaxial Silicon Transistor
Features
• Low Frequency Power Amplifier, Power Regulator
• Collector Current : I
C
= -3A
• Collector Dissipation : P
C
 = 10W (T
C
=25
°C)
• Complement to KSC1173
Absolute Maximum Ratings * 
T
A
 = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
- 30
V
V
CEO
Collector-Emitter Voltage
- 30
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current
- 3
A
P
C
Collector Dissipation (T
C
=25
°C)
10
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 55 to + 150
°C
1.Base    2.Collector    3.Emitter
1
TO-220