Fairchild Semiconductor N/A KSA1015GRTA Datenbogen
Produktcode
KSA1015GRTA
KSA101
5
— PNP Epit
axial Silicon
T
ransistor
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSA1015 Rev. 1.1.2
1
January 2014
KSA1015
PNP Epitaxial Silicon Transistor
PNP Epitaxial Silicon Transistor
Features
• Low-Frequency Amplifier
• Collector-Base Voltage: V
• Collector-Base Voltage: V
CBO
= -50 V
• Complement to KSC1815
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number
Marking
Package
Packing Method
KSA1015GRTA
A1015
TO-92 3L
Ammo
KSA1015YTA
A1015
TO-92 3L
Ammo
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
-50
V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-150
mA
I
B
Base Current
-50
mA
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature Range
-55 to 150
°C
1. Emitter 2. Collector 3. Base
TO-92
1