Fairchild Semiconductor N/A FFB2222A Datenbogen

Absolute Maximum Ratings*      

T

A

 = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

V

CEO

Collector-Emitter Voltage

40

V

V

CBO

Collector-Base Voltage

75

V

V

EBO

Emitter-Base Voltage

5.0

V

I

C

Collector Current - Continuous

500

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

 

1998 Fairchild Semiconductor Corporation

T

A

 = 25°C unless otherwise noted

P

D

Total Device Dissipation

Derate above 25

°

C

300

2.4

700

5.6

1,000

8.0

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

Effective 4 Die
Each Die

415

180

125
240

°

C/W

°

C/W

°

C/W



This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.

NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable.  Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.