Fairchild Semiconductor N/A MJE800STU Datenbogen
Produktcode
MJE800STU
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE
800/
801/
802/
803
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector- Base Voltage : MJE800/801
: MJE802/803
: MJE802/803
60
80
80
V
V
V
V
CEO
Collector-Emitter Voltage : MJE800/801
: MJE802/803
: MJE802/803
60
80
80
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current
4
A
I
B
Base Current
0.1
A
P
C
Collector Dissipation (T
C
=25
°
C)
40
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CEO
Collector-Emitter Breakdown Voltage
: MJE800/801
: MJE802/803
: MJE802/803
I
C
= 50mA, I
B
= 0
60
80
80
V
V
V
I
CEO
Collector Cut-off Current
: MJE800/801
: MJE802/803
: MJE802/803
V
CE
= 60V, I
B
= 0
V
CE
= 80V, I
B
= 0
100
100
100
µ
A
µ
A
I
CBO
Collector Cut-off Current
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100
°
C
100
500
500
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
2
mA
h
FE
DC Current Gain : MJE800/802
: MJE801/803
: ALL DEVICES
: ALL DEVICES
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
750
750
100
750
100
V
CE
(sat)
Collector-Emitter Saturation Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
: MJE801/803
: ALL DEVICES
I
C
= 1.5A, I
B
= 30mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
2.5
2.8
2.8
3
V
V
V
V
V
V
BE
(on)
Base-Emitter ON Voltage
: MJE800/802
: MJE801/803
: ALL DEVICES
: MJE801/803
: ALL DEVICES
V
CE
= 3V, I
C
= 1.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
2.5
2.5
2.5
3
V
V
V
V
V
MJE800/801/802/803
Monolithic Construction With Built-in Base-
Emitter Resistors
Emitter Resistors
• High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= 1.5 and 2.0A DC
• Complement to MJE700/701/702/703
R1
10
k
Ω
≅
R2
0.6
k
Ω
≅
Equivalent Circuit
B
E
C
R1
R2
1
TO-126
1. Emitter 2.Collector 3.Base