Fairchild Semiconductor N/A MJD31CTF Datenbogen
Produktcode
MJD31CTF
MJD31C —
NPN
Epit
axial Silic
on T
ransistor
© 2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MJD31C Rev. 1.1.0
1
November 2013
MJD31C
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Features
• General-Purpose Amplifier
• Low-Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
• Low-Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
Applications
• Switching Regulators
• Converters
• Power Amplifiers
• Converters
• Power Amplifiers
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number
Top Mark
Package
Packing Method
MJD31CTF
MJD31C
TO-252 3L (DPAK)
Tape and Reel
MJD31CITU
MJD31C-I
TO-251 3L (IPAK)
Rail
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
100
V
V
CEO
Collector-Emitter Voltage
100
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
3
A
I
CP
Collector Current (Pulse)
5
A
I
B
Base Current
1
A
P
C
Collector Dissipation (T
C
= 25
°C)
15.00
W
Collector Dissipation (T
A
= 25
°C)
1.56
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 to 150
°C
Description
Designed for general-purpose power and switching, such
as output or driver stages in applications.
as output or driver stages in applications.
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1