Fairchild Semiconductor N/A MJD31CTF Datenbogen

Produktcode
MJD31CTF
Seite von 7
MJD31C — 
NPN 
Epit
axial Silic
on T
ransistor
© 2001 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
MJD31C Rev. 1.1.0
November 2013
MJD31C
NPN Epitaxial Silicon Transistor
Features
• General-Purpose Amplifier 
• Low-Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
Applications
• Switching Regulators
• Converters
• Power Amplifiers
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
 = 25°C unless otherwise noted.
Part Number
Top Mark
Package
Packing Method
MJD31CTF
MJD31C
TO-252 3L (DPAK)
Tape and Reel
MJD31CITU
MJD31C-I
TO-251 3L (IPAK)
Rail
Symbol
Parameter
Value
Unit
 V
CBO
 Collector-Base Voltage
100
V
 V
CEO
 Collector-Emitter Voltage
100
V
 V
EBO
 Emitter-Base Voltage
5
V
 I
C
 Collector Current (DC)
3
A
 I
CP
 Collector Current (Pulse)
5
A
 I
B
 Base Current
1
A
 
P
C
 Collector Dissipation (T
= 25
°C)
15.00
W
 Collector Dissipation (T
= 25
°C)
1.56
 T
J
 Junction Temperature
 150
°C
 T
STG
 Storage Temperature
- 65 to 150
°C
Description
Designed for general-purpose power and switching, such
as output or driver stages in applications.
1.Base    2.Collector    3.Emitter
D-PAK
I-PAK
1
1