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Fairchild Semiconductor N/A BD681STU Datenbogen

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BD681STU
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD675A/
677A/
679A/
681
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings 
T
C
=25
°
C unless otherwise noted
Electrical Characteristics 
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW=300
µ
s, duty Cycle=1.5% Pulsed
Symbol
Parameter
Value
Units
 V
CBO
 Collector-Base Voltage                       : BD675A
                            : BD677A
                            : BD679A
                            : BD681
 45
 60
 80
100
V
V
V
V
 
V
CEO
 Collector-Emitter Voltage                   : BD675A
                            : BD677A
                            : BD679A
                            : BD681
 45
 60
 80
100
V
V
V
V
 
V
EBO
 Emitter-Base Voltage
  5
V
 
I
C
 Collector Current (DC)
  4
A
 
I
CP
 *Collector Current (Pulse)
  6
A
 
I
B
 Base Current
100
mA
 P
C
 Collector Dissipation (T
C
=25
°
C)
 40
W
 T
J
 Junction Temperature
150
°
C
 T
STG
 Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
 V
CEO
(sus)
*Collector-Emitter Sustaining Voltage
  : BD675A
  : BD677A
  : BD679A
  : BD681
 I
C 
= 50mA, I
B 
= 0
 45
 60
 80
100
V
V
V
V
 I
CBO
 Collector-Base Voltage     : BD675A
  : BD677A
  : BD679A
  : BD681
 V
CB 
= 45V, I
E 
= 0
 V
CB 
= 60V, I
E 
= 0
 V
CB 
= 80V, I
E 
= 0
 V
CB 
= 100V, V
BE 
= 0
200
200
200
200
µ
A
µ
A
µ
A
µ
A
 I
CEO
 Collector Cut-off Current    : BD675A
                                           : BD677A
                                           : BD679A
                                           : BD681
 V
CE 
= 45V, V
BE 
= 0
 V
CE 
= 60V, V
BE 
= 0
 V
CE 
= 80V, V
BE 
= 0
 V
CE 
= 100V, V
BE 
= 0
500
500
500
500
µ
A
µ
A
µ
A
µ
A
 I
EBO
 Emitter Cut-off Current
 V
EB 
= 5V, I
C 
= 0
2
mA
 h
FE
* DC Current Gain               : BD675A/677A/679A
           : BD681
 V
CE 
= 3V, I
C 
= 2A
 V
CE 
= 3V, I
C 
= 1.5A
750
750
 V
CE
(sat)
* Collector-Emitter Saturation Voltage
           : BD675A/677A/679A
           : BD681
 I
C 
= 2A, I
B 
= 40mA
 I
C 
= 1.5A, I
B 
= 30mA
2.8
2.5
V
V
 V
BE
(on)
* Base-Emitter ON Voltage : BD675A/677A/679A 
           : BD681
 V
CE 
= 3V, I
C 
= 2A
 V
CE 
= 3V, I
C 
= 1.5A  
2.5
2.5
V
V
BD675A/677A/679A/681
Medium Power Linear and Switching 
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
1
TO-126
1. Emitter    2.Collector    3.Base