Fairchild Semiconductor N/A FMBS2383 Datenbogen

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

FMBS2383 Rev. A0

1 

April 2011

• Power Amplifier
• Collector-Emitter Voltage : V

CEO

=160V

• Current Gain Bandwidth Product : f

T

=120MHz

T

a

 = 25°C unless otherwise noted

* note1) : Minimum land pattern size

 T

a 

= 25

°C unless otherwise noted

V

CBO

Collector-Base Voltage

160

V

V

CEO

Collector-Emitter Voltage

160

V

V

EBO

Emitter-Base Voltage

5

V

I

C

Collector Current

800

mA

I

B

Base Current

160

mA

P

D

Power Dissipation

630

mW

R

θJA

*

Thermal Resistance, Junction to Ambient 

200

°C/W

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature

-55 to +150

°C

BV

CBO

Collector-Base Breakdown Voltage

I

C 

= 10

μA, I

B 

= 0

160

V

BV

CEO

Collector-Emitter Breakdown Voltage I

C 

= 10mA, I

B 

= 0

160

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E 

= 1mA, I

C 

= 0

5

V

I

CBO

Collector Cut-off Current

V

CB 

= 120V, I

E 

= 0

100

nA

I

EBO

Emitter Cut-off Current

V

BE 

= 5V, I

C 

= 0

100

nA

h

FE

DC Current Gain

V

CE 

= 5V, I

C 

= 100mA

80

160

V

CE

 (sat)

Collector-Emitter Saturation Voltage

I

C 

= 500mA, I

B 

= 50mA

1.0

V

V

BE

 (on)

Base-Emitter On Voltage

V

CE 

= 5V, I

C 

= 500mA

1.0

V

f

T

Current Gain Bandwidth Product

V

CE 

= 5V, I

C 

= 100mA

120

MHz

C

ob

Output Capacitance

V

CB 

= 10V, I

E 

= 0, f = 1MHz

30

pF