Fairchild Semiconductor N/A MJE181STU Datenbogen
Produktcode
MJE181STU
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE
180/
181/
182
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : MJE180
: MJE181
: MJE182
: MJE182
60
80
80
100
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : MJE180
: MJE181
: MJE182
: MJE182
40
60
80
60
80
V
V
V
V
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current (DC)
3
A
I
CP
Collector Current (Pulse)
6
A
I
B
Base Current
1
A
P
C
Collector Dissipation (T
a
=25
°
C)
1.5
W
P
C
Collector Dissipation (T
C
=25
°
C)
12.5
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CEO
Collector -Emitter Breakdown Voltage
: MJE180
: MJE181
: MJE182
: MJE181
: MJE182
I
C
= 10mA, I
B
= 0
40
60
80
60
80
V
V
V
V
V
I
CBO
Collector Cut-off Current
: MJE180
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
: MJE182
: MJE180
: MJE181
: MJE182
V
CB
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CB
= 60V, I
E
= 0 @ T
C
= 150
°
C
V
CB
= 80V, I
E
= 0 @ T
C
= 150
°
C
V
CB
= 100V, I
E
= 0 @ T
C
= 150
°
C
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
µ
A
µ
A
µ
A
mA
mA
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
BE
= 7V, I
C
= 0
0.1
µ
A
h
FE
DC Current Gain
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 1.5A
50
30
12
30
12
250
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 500mA, I
B
= 50mA
I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
0.3
0.9
1.7
0.9
1.7
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
1.5
2.0
2.0
V
V
V
V
BE
(on)
Base-Emitter ON Voltage
V
CE
= 1V, I
C
= 500mA
1.2
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 100mA
50
MHz
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 0.1MHz
30
pF
MJE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
Low Current High Speed Switching Applications
1
TO-126
1. Emitter 2.Collector 3.Base