Fairchild Semiconductor N/A MJE210STU Datenbogen

©2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

T

C

=25

°

C unless otherwise noted

T

C

=25

°

C unless otherwise noted

 V

CBO

 Collector-Base Voltage

- 40

V

 V

CEO

 Collector-Emitter Voltage

- 25

V

 

V

EBO

 Emitter-Base Voltage

 - 8

V

 

I

C

 Collector Current

 - 5

A

 

P

C

 Collector Dissipation (T

C

=25

°

C)

 15

W

 

T

J

 Junction Temperature

150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

 BV

CEO

 Collector-Emitter Breakdown Voltage

 I

C 

= - 10mA, I

B 

= 0

-25

V

 I

CBO

 Collector Cut-off Current

 V

CB 

= -40V, I

E 

= 0

 V

CB 

= - 40V, I

E 

=0 @ T

J 

= 125

°

C

-100
-100

nA

µ

A

 

I

EBO

 Emitter Cut-off Current

 V

BE 

= - 8V, I

C 

= 0

-100

nA

 

h

FE1

 h

FE2

 h

FE3

 DC Current Gain

 V

CE 

= - 1V, I

C 

= - 500mA

 V

CE 

= - 1V, I

C 

= - 2A

 V

CE 

= - 2V, I

C 

= - 5A

70
45
10

180

 V

CE

(sat)

 Collector-Emitter Saturation Voltage

 I

C 

= - 500mA, I

B 

= - 50mA

 I

C 

= - 2A, I

C 

= - 200mA

 I

C 

= - 5A, I

B 

= - 1A

-0.3

-0.75

-1.8

V
V
V

 V

BE

(sat)

 Base-Emitter Saturation Voltage

 I

C 

= - 5A, I

B 

= - 1A

-2.5

V

 V

BE

(on)

 Base-Emitter ON Voltage

 V

CE 

= - 1V, I

C 

= - 2A

-1.6

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= - 10V, I

C 

= - 100mA

65

MHz

 C

ob

 Output Capacitance

 V

CB 

= - 10V, I

E 

= 0, f = 1MHz

120

pF

• Low Collector-Emitter Saturation Voltage 
• High Current Gain Bandwidth Product : f

T

=65MHz@I

C

= -100mA (Min.)

• Complement to MJE200

1

TO-126

1. Emitter    2.Collector    3.Base