Fairchild Semiconductor N/A MJD45H11TM Datenbogen

© 2010 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

MJD45H11 Rev. C3

1 

April 2010

• General Purpose Power and Switching Such as Output or Driver Stages in Applications
• D-PAK for Surface Mount Applications

• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK: “-I” Suffix)
• Electrically Similar to Popular MJE45H
• Fast Switching Speeds
• Low Collector Emitter Saturation Voltage

Absolute Maximum Ratings  

T

A 

= 25°C unless otherwise noted

 T

A

 = 25°C unless otherwise noted

* Pulse Test: PW

≤300µs, Duty Cycle≤2%

 

 V

CEO

 Collector-Emitter Voltage

 - 80

V

 V

EBO

 Emitter-Base Voltage

  - 5

V

 I

C

 Collector Current (DC)

  - 8

A

 I

CP

 Collector Current (Pulse)

 - 16

A

 

P

C

 Collector Dissipation (T

C

=25

°C)

  20

W

 Collector Dissipation (T

A

=25

°C)

1.75

W

 T

J

 Junction Temperature

 150

°C

 T

STG

 Storage Temperature

- 55 to +150

°C

 V

CEO

(sus) *Collector-Emitter Sustaining Voltage  I

C 

= - 30mA, I

B 

= 0

- 80

V

 I

CEO

 Collector Cut-off Current

 V

CE 

= - 80V, I

B 

= 0

 - 10

µA

 I

EBO

 Emitter Cut-off Current

 V

BE 

= - 5V, I

C 

= 0

 - 50

µA

 

h

FE

*DC Current Gain

 V

CE 

= - 1V, I

C 

= - 2A

 V

CE 

= - 1V, I

C 

= - 4A

 60
 40

 V

CE

(sat)

*Collector-Emitter Saturation Voltage  I

C 

= - 8A, I

B 

= - 0.4A

  - 1

V

 V

BE

(on)

*Base-Emitter Saturation Voltage

 I

C 

= - 8A, I

B 

= - 0.8A

- 1.5

V

 f

T

 Current Gain Bandwidth Product

 V

CE

= - 10A, I

C 

= - 0.5A

 40

MHz

 

C

ob

 Collector Capacitance

 V

CB 

= - 10V, f = 1MHz

230

pF

 

t

ON

 Turn On Time

 I

C 

= - 5A

 I

B1

= - I

B2

 = - 0.5A

135

ns

 

t

STG

 Storage Time

500

ns

 

t

F

 Fall Time

100

ns

1.Base    2.Collector    3.Emitter

D-PAK

I-PAK

1

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