Fairchild Semiconductor N/A KSP92TA Datenbogen
Produktcode
KSP92TA
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP
92/9
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: KSP92
: KSP93
: KSP93
-300
-200
-200
V
V
V
V
CEO
Collector-Emitter Voltage
: KSP92
: KSP93
: KSP93
-300
-200
-200
V
V
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-500
mA
P
C
Collector Power Dissipation (T
a
=25
°
C)
625
mW
Derate above 25
°
C
5
mW/
°
C
P
C
Collector Power Dissipation (T
C
=25
°
C)
1.5
W
Derate above 25
°
C
12
mW/
°
C
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP92
: KSP93
: KSP93
I
C
= -100
µ
A, I
E
=0
-300
-200
-200
V
V
V
BV
CEO
* Collector-Emitter Breakdown Voltage
: KSP92
: KSP93
: KSP93
I
C
= -1mA, I
B
=0
-300
-200
-200
V
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -100
µ
A, I
C
=0
-5
V
I
CBO
Collector Cur-off Current
: KSP92
: KSP93
: KSP93
V
CB
= -200V, I
E
=0
V
CB
= -160V, I
E
=0
-0.25
-0.25
-0.25
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
EB
= -3V, I
C
=0
-0.10
µ
A
h
FE
* DC Current Gain
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
25
40
25
40
25
V
CE
(sat)
*Collector-Emitter Saturation Voltage
I
C
= -20mA, I
B
= -2mA
-0.50
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
I
C
= -20mA, I
B
= -2mA
-0.90
V
f
T
Current Gain Bandwidth Product
V
CE
= -20V, I
C
= -10mA, f=100MHz
50
MHz
C
ob
Output Capacitance
: KSP92
: KSP93
: KSP93
V
CB
= -20V, I
E
=0
f=1MHz
6
8
8
pF
pF
pF
KSP92/93
High Voltage Transistor
1. Emitter 2. Base 3. Collector
TO-92
1